Failure mechanisms of a silicon-based CMOS image sensor irradiated by a 1550†nm nanosecond laser.

Cameras, LiDAR, and radars are indispensable for accurate perception of the surrounding environment and autonomous driving. Failure mechanisms of silicon-based CMOS image sensor (CIS) irradiated by 1550 nm nanosecond laser were investigated systematically in this paper. The damages of CIS were divided into point damage, line damage, and cross damage according to different damage performances. The damage thresholds under different irradiation conditions (different repetition rates, pulse widths, and irradiation times) were explored. Large repetition rates and long irradiation times would induce more heat accumulation, more temperature increase, and a low point damage threshold. The damage threshold for a pulse with a narrow pulse width is lower than that for a pulse with a long pulse width. The damaged CIS was analyzed further by focused ion beam (FIB) and scanning electron microscope (SEM). The damage location in the internal CIS structure was analyzed and the overall failure process was summarized. The results we get could enrich the database of laser damage mechanisms and laser damage thresholds of CIS, which will provide meaningful guidance for the camera design technology and anti-laser reinforcement technology of optoelectronic devices.